Atomic Layer Deposition for Piezoelectric and Ferroelectric Device Performance
Not specified
No deadline
United States
individual
About This Opportunity
The Army Research Laboratory Research Associateship Program (ARL-RAP) offers a research opportunity focused on materials processing such as atomic layer deposition, deep silicon etching, chemical etching, and thermal treatments. The research involves materials characterization using scanning electron microscopy and x-ray diffraction and electrical characterization to achieve structure and component uniformity in optimized piezoelectric and ferroelectric test devices. The ARL-RAP is designed to significantly increase the involvement of creative and highly trained scientists and engineers from academia and industry in scientific and technical areas of interest and relevance to the Army. Scientists and Engineers at the CCDC Army Research Laboratory (ARL) help shape and execute the Army's program for meeting the challenge of developing technologies that will support Army forces in meeting future operational needs by pursuing scientific research and technological developments in diverse fields such as applied mathematics, atmospheric characterization, simulation and human modeling, digital/optical signal processing, nanotechnology, material science and technology, multifunctional technology, combustion processes, propulsion and flight physics, communication and networking, and computational and information sciences.
Who Can Apply
- Region
- United States
- Citizenship
- United States
- Applicants
- individual
Application Details
Stages
- 1 two_stage
Required documents
Review process
Initial advisor selection followed by research proposal submission to ARL-RAP review panel
External Application
This opportunity requires you to apply directly on the funder's website.
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- Award Amount
- Not specified
- Application Deadline
- No deadline
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