Fellowship

Atomic Layer Deposition for Piezoelectric and Ferroelectric Device Performance

DEVCOM Army Research Laboratory Original Source
Award

Not specified

Deadline

No deadline

Location

United States

Applicants

individual

About This Opportunity

The Army Research Laboratory Research Associateship Program (ARL-RAP) offers a research opportunity focused on materials processing such as atomic layer deposition, deep silicon etching, chemical etching, and thermal treatments. The research involves materials characterization using scanning electron microscopy and x-ray diffraction and electrical characterization to achieve structure and component uniformity in optimized piezoelectric and ferroelectric test devices. The ARL-RAP is designed to significantly increase the involvement of creative and highly trained scientists and engineers from academia and industry in scientific and technical areas of interest and relevance to the Army. Scientists and Engineers at the CCDC Army Research Laboratory (ARL) help shape and execute the Army's program for meeting the challenge of developing technologies that will support Army forces in meeting future operational needs by pursuing scientific research and technological developments in diverse fields such as applied mathematics, atmospheric characterization, simulation and human modeling, digital/optical signal processing, nanotechnology, material science and technology, multifunctional technology, combustion processes, propulsion and flight physics, communication and networking, and computational and information sciences.

Who Can Apply

Region
United States
Citizenship
United States
Applicants
individual

Application Details

Stages

  1. 1 two_stage

Required documents

cv transcripts references research_proposal

Review process

Initial advisor selection followed by research proposal submission to ARL-RAP review panel