CFETs based on atomically thin semiconductors

This PhD studentship supports research on ultra-scaled complementary field effect transistors (CFETs) using atomically thin body semiconductors. Modern electronics face challenges in scaling down semiconductor technology, especially as devices approach sub-1-nm technologies. Atomically thin body (ATB) semiconductors such as transition metal dichalcogenide offer a promising solution owing to their ultra-thin channels that enable precise control over electrical current flow. The project will focus on developing ultra-scaled complementary field effect transistors (CFETs) using ATB semiconductors. Key activities include creating low-resistance electrical contacts, optimising semiconductor/dielectric interfaces for efficient switching, synthesis of wafer scale ATB semiconductors, and tuning threshold voltages for both n- and p-type transistors. By employing industry-compatible processes, this project aims to pave the way for high-performance, low-power electronics, establishing CFETs as fundamental for next-generation semiconductor technologies. The studentship will be based at the University of Cambridge in the Department of Materials Science and Metallurgy in the 2D Materials and Devices group under the supervision of Dr Yan Wang.