Fellowship

Development of Novel Properties from Complex Oxide Thin-films

DEVCOM Army Research Laboratory Original Source
Award

Not specified

Deadline

No deadline

Location

United States

Applicants

individual

About This Opportunity

Research opportunities are available for fundamental and applied research of complex oxide and ferroelectric thin-film materials for RF/MW and acoustic applications through the Army Research Laboratory Research Associateship Program (ARL-RAP). This research will focus on theoretical understanding and experimental determination of non-linear electrical and electromechanical properties of metastable phases derived from thin-film heterostructures. The research includes the design and characterization of microwave acoustic resonators and novel RF/MW components based on tunable ferroelectric thin-film materials. The program is designed to significantly increase the involvement of creative and highly trained scientists and engineers from academia and industry in scientific and technical areas of interest and relevance to the Army. Scientists and Engineers at the DEVCOM Army Research Laboratory help shape and execute the Army's program for meeting the challenge of developing technologies that will support Army forces in meeting future operational needs.

Who Can Apply

Region
United States
Citizenship
United States
Project in
United States
Applicants
individual

Application Details

Stages

  1. 1 two_stage

Required documents

cv transcripts references research_proposal

Review process

If selected by an advisor, the participant will be required to write a research proposal to submit to the ARL-RAP review panel for evaluation.