Neuromorphic materials and computing Devices and platforms

This research position focuses on low power electronic devices and circuits within the Army Research Laboratory Research Associateship Program (ARL-RAP). As computing reaches its limits due to power scaling challenges of today's transistor technologies, this program develops new approaches to high performance computing through neuromorphic devices based on ferroelectric FETs and electrochemically gated devices. The opportunity exposes candidates to a multidisciplinary research program spanning materials development, device design and integration, and circuit development. Candidates are expected to have in-depth knowledge of device physics and basic circuit design, with experience in fabrication and characterization of FETs and memory devices, electrical and material characterization techniques, and material growth and device integration techniques such as ALD, sputtering, and UHV deposition. The ARL-RAP is designed to significantly increase the involvement of creative and highly trained scientists and engineers from academia and industry in scientific and technical areas of interest and relevance to the Army.