Silicon Carbide for Solid-State Qubits, Opto-Electronics & Power Electronics

A research opportunity is available with the U.S Army Research Laboratory's (ARL) Sensors and Electron Devices Directorate (SEDD) located in Adelphi, MD. SEDD is seeking a highly motivated candidate for a Postdoctoral Fellowship with a background in Physics, Materials Science, Electrical Engineering or related fields. Silicon Carbide is a well-established wide-bandgap semiconductor with demonstrated commercial uses primarily for power electronics and as a substrate for lighting. Current research at ARL is aligned to demonstrating point defects in silicon carbide as a viable candidate for quantum technologies. The potential for a solid state quantum network provides a prominent role for a silicon carbide qubit integrated with sensing capabilities. Research proposals are solicited in the following areas: (i) Epitaxial growth of low-strain, low defect density silicon carbide by CVD and relevant material characterization for use as solid-state spin qubits in different SiC polytypes and device structures, (ii) Modeling and fabrication of photonic crystal nanostructures in SiC for quantum device development and hybrid GaN/SiC optoelectronic sensors or (iii) Development and demonstration of hybrid devices that integrate quantum, opto-electronic, MEMS and/or power electronic components in SiC on the wafer scale.