Neuromorphic materials and computing Devices and platforms

This research position focuses on low power electronic devices and circuits through the Army Research Laboratory Research Associateship Program (ARL-RAP). As computing reaches its limits due to power scaling challenges of today's transistor technologies, this program develops neuromorphic devices based on ferroelectric FETs and electrochemically gated devices. The opportunity exposes candidates to a multidisciplinary research program spanning materials development, device design and integration, and circuit development. The ARL-RAP is designed to significantly increase the involvement of creative and highly trained scientists and engineers from academia and industry in scientific and technical areas of interest and relevance to the Army. The program helps shape and execute the Army's program for meeting the challenge of developing technologies that will support Army forces in meeting future operational needs.